Reproducing Fukuda et al. 1992: trap density and charge of rapid thermal oxides

One of the [studies we reproduced](/writing/interface-studies-reproduced) for [Questions we need Emily to answer](/writing/questions-for-emily-testing-a-theory-of-the-interface), the companion to [the essay](/writing/testing-a-theory-of-the-interface-with-an-ontology). Generated by `scripts/reproduce_studies.py` from `reproductions/fukuda_1992.py`. Every value from the paper was read by an AI agent and has not been checked by a person; the sample and history were re-read from the PDF alone by a second agent that had not seen our earlier transcription.

The study and why we depend on it

H. Fukuda, M. Yasuda, T. Iwabuchi, S. Kaneko, T. Ueno and I. Ohdomari, “Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2 films”, J. Appl. Phys. 72, 1906 (1992).

Rapid thermal oxides of 4 to 11 nm on n-type (100) silicon, grown in seconds at 1000 to 1200 °C, are the shortest and hottest planar histories the project holds. The paper finds that midgap trap density falls exponentially during oxidation, with a time constant of 3 to 17 s, from a starting value that is the same at every temperature, that fixed charge follows it, and that 10 to 120 s anneals in deuterium, argon or vacuum first cut the density about ten times and then let it rise. scripts/analyse_fukuda.py used Figure 3 to show that the trap-density program's clock, fitted on furnace oxides, is about 170 times too slow here. This page runs the predictor's own programs on the paper's histories, written with the lamp ramp, the cooling and the two gate steps the stored analysis leaves out.

How well can this study be reproduced?

Low. The oxidation temperature and time and the anneal gas, temperature and time are given for every point, which is more than most papers give. Everything around them is not: the lamp ramp, whether the stated time includes it, the gas and rate of cooling, whether the anneals were in situ, and the time of the two steps after every anneal, a 620 °C polysilicon deposition and a 900 °C phosphorus doping. Thickness is not given per oxidation time. For seconds-long steps at 1000 to 1200 °C these unstated parts are as long as the stated ones.

The grade is ours and is about the paper as a source for simulation, not about the quality of the experiment: high means the sample, every step and its timing are stated well enough that a simulation needs no choices of ours; moderate that some choices are ours and are listed; low that the result depends on choices the paper does not constrain.

The sample and its history, played back

The sample is drawn from the simulation: layer heights and the read-outs are what the ISL programs compute at each moment of the history. Steps the language cannot state (a clean, a metallization, a measurement) are on the clock and marked as recorded, not simulated.

Does our sample and history match the paper's?

Left: the paper's own words, with the page of the PDF. Right: what we simulate. 7 same, 6 approximated, 6 assumed, 1 not in ours.

The timing of the history

Time is counted from the start of the first simulated step. A step the language cannot state takes no simulated time; where the paper gives its duration, the duration is in the last column. Stated means the paper gives the duration; partly stated that it gives a bound or a range; not stated; assumed that the duration in our history is ours.

1000 °C, 10 s, as grown

Simulated time in this history: 1 h 15 min 50 s.

Across the samples

Timing the paper does not give

• The lamp heat-up: rate, gas, and whether the stated 1 to 100 s includes it. At 5 to 10 s and 1200 °C a 10 s ramp is as long as the oxidation.
• The cooling after every oxidation and anneal: rate, gas and where it ends.
• No thickness per oxidation time: Figures 2 and 3 give the same densities against thickness and against time without saying which point is which.
• Whether the deuterium and argon anneals followed the oxidation in the same chamber, and how they heated up.
• How long the oxygen took to pump out and the lamps to drop from the oxidation temperature to 900 °C before the vacuum anneal.
• The polysilicon deposition at 620 °C (350 nm; time not stated) and the phosphorus doping at 900 °C (time, source and gas not stated), after every anneal and before every measurement.

What the second reading changed

• The project held no stored recipe for this paper: scripts/analyse_fukuda.py fits closed-form laws to Figure 3 with the oxidation time as the only history. This page adds the heat-up, cooling, gate deposition and doping as RUNs, all with stated or searched ranges.
• The project's Figure 3 reading (data/primary_sources/fukuda_1992_jap_72_1906/figure3_agent_read_UNVERIFIED.csv) and the second reading agree within 5% on all 14 points (for example 5.0 against 5.1×10^11 at 1000 °C, 10 s); Figures 2 and 7 agree within 5%.
• Figures 4, 5 and 6 were not digitized in the project; the second reading reads all three. Figure 5 (deuterium) and Figure 6 (fixed charge) are on this page for the first time.
• SOURCE.md calls the argon 500 °C result an inconsistency between abstract and text. The text (PDF p. 5) says Dit-m “decreases at the initial stage down to 9.5×10^9” then rises; the abstract says argon at 500 °C “did not affect the density at all”. Figure 7 agrees with the text.
• The library records the pull as “rapid thermal, lamp cooled”. The paper says nothing about cooling.
• The project's analysis paired Figures 2 and 3 implicitly (“the same samples against thickness and against time”). The second reading finds the pairing exact at 1000 °C and for three of four points at 1100 °C; at 1200 °C Figure 3 has six points and Figure 2 five, and they cannot be paired.

Their terms and ours

The simulation in our language

Each sample is one history file: a SAMPLE and a CONTROL_TRAJECTORY. This is the whole input; run it with PYTHONPATH=. python -m isl_harness.predict <file>.

1000 °C, 10 s, as grown

# 1000 °C, 10 s, as grown
SAMPLE Wafer_rto_1000C_10s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1000 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 10 TEMP 1000->1000 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1000->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1000 °C, 28 s, as grown

# 1000 °C, 28 s, as grown
SAMPLE Wafer_rto_1000C_28s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1000 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 28 TEMP 1000->1000 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1000->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1000 °C, 50 s, as grown

# 1000 °C, 50 s, as grown
SAMPLE Wafer_rto_1000C_50s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1000 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 50 TEMP 1000->1000 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1000->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1000 °C, 90 s, as grown

# 1000 °C, 90 s, as grown
SAMPLE Wafer_rto_1000C_90s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1000 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 90 TEMP 1000->1000 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1000->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1100 °C, 9 s, as grown

# 1100 °C, 9 s, as grown
SAMPLE Wafer_rto_1100C_9s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 9 TEMP 1100->1100 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1100 °C, 15 s, as grown

# 1100 °C, 15 s, as grown
SAMPLE Wafer_rto_1100C_15s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 15 TEMP 1100->1100 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1100 °C, 35 s, as grown

# 1100 °C, 35 s, as grown
SAMPLE Wafer_rto_1100C_35s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 35 TEMP 1100->1100 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1100 °C, 70 s, as grown

# 1100 °C, 70 s, as grown
SAMPLE Wafer_rto_1100C_70s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 70 TEMP 1100->1100 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1200 °C, 5.4 s, as grown

# 1200 °C, 5.4 s, as grown
SAMPLE Wafer_rto_1200C_5p4s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1200 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 5.4 TEMP 1200->1200 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1200->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1200 °C, 6.4 s, as grown

# 1200 °C, 6.4 s, as grown
SAMPLE Wafer_rto_1200C_6p4s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1200 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 6.4 TEMP 1200->1200 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1200->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1200 °C, 8 s, as grown

# 1200 °C, 8 s, as grown
SAMPLE Wafer_rto_1200C_8s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1200 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 8 TEMP 1200->1200 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1200->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1200 °C, 10 s, as grown

# 1200 °C, 10 s, as grown
SAMPLE Wafer_rto_1200C_10s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1200 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 10 TEMP 1200->1200 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1200->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1200 °C, 25 s, as grown

# 1200 °C, 25 s, as grown
SAMPLE Wafer_rto_1200C_25s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1200 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation DURATION 25 TEMP 1200->1200 AMBIENT dry_O2 TIMING stated
    RUN Cool DURATION 30 TEMP 1200->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1000 °C to 5.5 nm, as grown

# 1000 °C to 5.5 nm, as grown
SAMPLE Wafer_fig4_1000C_5p5nm {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1000 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p5nm1000 DURATION 28 TEMP 1000->1000 AMBIENT dry_O2 TIMING assumed VARY duration 5..60
    RUN Cool DURATION 30 TEMP 1000->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1050 °C to 5.5 nm, as grown

# 1050 °C to 5.5 nm, as grown
SAMPLE Wafer_fig4_1050C_5p5nm {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1050 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p5nm1050 DURATION 20 TEMP 1050->1050 AMBIENT dry_O2 TIMING assumed VARY duration 4..45
    RUN Cool DURATION 30 TEMP 1050->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1100 °C to 5.5 nm, as grown

# 1100 °C to 5.5 nm, as grown
SAMPLE Wafer_fig4_1100C_5p5nm {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p5nm1100 DURATION 15 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 4..35
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

1200 °C to 5.5 nm, as grown

# 1200 °C to 5.5 nm, as grown
SAMPLE Wafer_fig4_1200C_5p5nm {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1200 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p5nm1200 DURATION 6 TEMP 1200->1200 AMBIENT dry_O2 TIMING assumed VARY duration 2..15
    RUN Cool DURATION 30 TEMP 1200->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, before any anneal

# 5.3 nm at 1100 °C, before any anneal
SAMPLE Wafer_start {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 500 °C, 10 s

# 5.3 nm at 1100 °C, then deuterium 500 °C, 10 s
SAMPLE Wafer_D2_500C_10s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 10 TEMP 500->500 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 500 °C, 20 s

# 5.3 nm at 1100 °C, then deuterium 500 °C, 20 s
SAMPLE Wafer_D2_500C_20s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 20 TEMP 500->500 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 500 °C, 30 s

# 5.3 nm at 1100 °C, then deuterium 500 °C, 30 s
SAMPLE Wafer_D2_500C_30s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 30 TEMP 500->500 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 500 °C, 60 s

# 5.3 nm at 1100 °C, then deuterium 500 °C, 60 s
SAMPLE Wafer_D2_500C_60s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 60 TEMP 500->500 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 500 °C, 120 s

# 5.3 nm at 1100 °C, then deuterium 500 °C, 120 s
SAMPLE Wafer_D2_500C_120s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 120 TEMP 500->500 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 900 °C, 10 s

# 5.3 nm at 1100 °C, then deuterium 900 °C, 10 s
SAMPLE Wafer_D2_900C_10s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 10 TEMP 900->900 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 900 °C, 20 s

# 5.3 nm at 1100 °C, then deuterium 900 °C, 20 s
SAMPLE Wafer_D2_900C_20s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 20 TEMP 900->900 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 900 °C, 30 s

# 5.3 nm at 1100 °C, then deuterium 900 °C, 30 s
SAMPLE Wafer_D2_900C_30s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 30 TEMP 900->900 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 900 °C, 60 s

# 5.3 nm at 1100 °C, then deuterium 900 °C, 60 s
SAMPLE Wafer_D2_900C_60s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 60 TEMP 900->900 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then deuterium 900 °C, 120 s

# 5.3 nm at 1100 °C, then deuterium 900 °C, 120 s
SAMPLE Wafer_D2_900C_120s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT pure_H2 PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 120 TEMP 900->900 AMBIENT pure_H2 TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT pure_H2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then argon 500 °C, 10 s

# 5.3 nm at 1100 °C, then argon 500 °C, 10 s
SAMPLE Wafer_Ar_500C_10s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT inert_Ar PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 10 TEMP 500->500 AMBIENT inert_Ar TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT inert_Ar PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then argon 500 °C, 30 s

# 5.3 nm at 1100 °C, then argon 500 °C, 30 s
SAMPLE Wafer_Ar_500C_30s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT inert_Ar PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 30 TEMP 500->500 AMBIENT inert_Ar TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT inert_Ar PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then argon 500 °C, 120 s

# 5.3 nm at 1100 °C, then argon 500 °C, 120 s
SAMPLE Wafer_Ar_500C_120s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->500 AMBIENT inert_Ar PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 120 TEMP 500->500 AMBIENT inert_Ar TIMING stated
    RUN AnnealCool DURATION 30 TEMP 500->300 AMBIENT inert_Ar PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then argon 900 °C, 10 s

# 5.3 nm at 1100 °C, then argon 900 °C, 10 s
SAMPLE Wafer_Ar_900C_10s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT inert_Ar PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 10 TEMP 900->900 AMBIENT inert_Ar TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT inert_Ar PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then argon 900 °C, 30 s

# 5.3 nm at 1100 °C, then argon 900 °C, 30 s
SAMPLE Wafer_Ar_900C_30s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT inert_Ar PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 30 TEMP 900->900 AMBIENT inert_Ar TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT inert_Ar PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then argon 900 °C, 120 s

# 5.3 nm at 1100 °C, then argon 900 °C, 120 s
SAMPLE Wafer_Ar_900C_120s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN Cool DURATION 30 TEMP 1100->300 AMBIENT dry_O2 PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    RUN AnnealHeatUp DURATION 10 TEMP 25->900 AMBIENT inert_Ar PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Anneal DURATION 120 TEMP 900->900 AMBIENT inert_Ar TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT inert_Ar PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then vacuum 900 °C, 10 s

# 5.3 nm at 1100 °C, then vacuum 900 °C, 10 s
SAMPLE Wafer_vacuum_900C_10s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN PumpDown DURATION 5 TEMP 1100->900 AMBIENT vacuum TIMING bound VARY duration 1..20
    RUN VacuumAnneal DURATION 10 TEMP 900->900 AMBIENT vacuum TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT vacuum PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then vacuum 900 °C, 30 s

# 5.3 nm at 1100 °C, then vacuum 900 °C, 30 s
SAMPLE Wafer_vacuum_900C_30s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN PumpDown DURATION 5 TEMP 1100->900 AMBIENT vacuum TIMING bound VARY duration 1..20
    RUN VacuumAnneal DURATION 30 TEMP 900->900 AMBIENT vacuum TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT vacuum PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

5.3 nm at 1100 °C, then vacuum 900 °C, 120 s

# 5.3 nm at 1100 °C, then vacuum 900 °C, 120 s
SAMPLE Wafer_vacuum_900C_120s {
    FAMILY: Si_Planar
    ORIENTATION: Si100
    CLEAN: sulfuric_peroxide_HF
    DOPING: n_type_5_8_ohm_cm
}
CONTROL_TRAJECTORY History {
    EVENT Clean KIND clean TIMING assumed                        # H2SO4-H2O2, then 1% HF, then deionized water
    EVENT Load KIND load TIMING assumed                          # Loaded “immediately” into the lamp-heated RTP chamber
    RUN HeatUp DURATION 10 TEMP 25->1100 AMBIENT vacuum PROFILE settling TAU 2 TIMING assumed VARY duration 3..30
    RUN Oxidation5p3nm DURATION 13 TEMP 1100->1100 AMBIENT dry_O2 TIMING assumed VARY duration 6..25
    RUN PumpDown DURATION 5 TEMP 1100->900 AMBIENT vacuum TIMING bound VARY duration 1..20
    RUN VacuumAnneal DURATION 120 TEMP 900->900 AMBIENT vacuum TIMING stated
    RUN AnnealCool DURATION 30 TEMP 900->300 AMBIENT vacuum PROFILE settling TAU 6 TIMING assumed VARY duration 10..120
    EVENT Unload KIND other TIMING assumed                       # Out of the RTP chamber
    RUN PolyDeposition DURATION 2400 TEMP 620->620 AMBIENT inert_N2 TIMING assumed VARY duration 1200..5400
    RUN GateDoping DURATION 1800 TEMP 900->900 AMBIENT inert_N2 TIMING assumed VARY duration 600..3600
    RUN DopingCool DURATION 300 TEMP 900->300 AMBIENT inert_N2 PROFILE settling TAU 60 TIMING assumed
    EVENT Pattern KIND etch TIMING assumed                       # Gates defined by photolithography, 2.704×10⁻³ cm²
    EVENT CV KIND measurement TIMING assumed                     # 1 MHz and quasistatic C-V
}

The programs the predictor ran on these histories: experiments/atomistic/hydrogen_passivation_equilibrium.isl.template, experiments/deal_qss/two_equilibria.isl.template, experiments/vitkavage_dit/oxide_growth.isl.template, scripts/search_growth.py (structure generated from the grammar), scripts/search_trap_density.py (structure generated from the grammar).

The model itself, experiments/deal_qss/two_equilibria.isl.template, as it is written. Every equation the simulation uses is in this text; the runtime holds no physics.

# ==============================================================================
# ISL MODEL: FIXED CHARGE WITH AN EQUILIBRIUM IN EACH GAS
#
# In oxygen the charge moves toward a steady value that falls with temperature (the
# line of Deal et al. 1967, unchanged, with the oxygen kinetics fitted there).
# In a gas without oxygen it moves toward a lower equilibrium that also falls with
# temperature, Qi_ref * exp(E_q / k_B * (1/T - 1/T_iref)), at a rate of its own.
#
# The inert clock and the (100) inert equilibrium are fitted to the argon time series
# of Akinwande, Ho and Plummer (1982). The (111) inert equilibrium is fitted to their
# cycling experiment, with the clock carried over from (100). The model is then
# tested, unchanged, on the Fairchild wafers of 1967 and 1980.
# Fields in {{braces}} are filled by scripts/run_fixed_charge_two_lines.py.
# ==============================================================================
SAMPLE Wafer_{tag} {{
    FAMILY: Si_Planar
    ORIENTATION: Si{orientation}
}}
# The wafer starts at the steady value for its oxidation temperature.
STATE Q_f {{ UNIT: cm^-2; INITIAL: Q_hot + slope * (T_hot - T_ox); MIN: 0; MAX: 1.0e14 }}
CONTROL T {{ UNIT: K }}
CONTROL p_O2 {{ UNIT: atm }}
PARAMETER Q_hot {{ VALUE: {Q_hot}; UNIT: cm^-2; STATUS: sourced; SOURCE: Deal et al. 1967 Table II, steady value after dry oxidation at 1200 C }}
PARAMETER slope {{ VALUE: {slope}; UNIT: cm^-2 K^-1; STATUS: sourced; SOURCE: Deal et al. 1967 Table II, line through the 1200 C and 920 C steady values }}
PARAMETER T_hot {{ VALUE: 1473.15; UNIT: K; STATUS: constant }}
PARAMETER T_ox {{ VALUE: {T_ox_K}; UNIT: K; STATUS: constant }}
# ---- fitted to the pull-rate series ------------------------------------------------
PARAMETER k0 {{ VALUE: 1.0e3; UNIT: s^-1; STATUS: fitted }}
PARAMETER E_a {{ VALUE: 1.0; UNIT: eV; STATUS: fitted }}
# ---- fitted to the argon anneals of Akinwande, Ho and Plummer (1982) -----------------
PARAMETER k_i0 {{ VALUE: 1.0e1; UNIT: s^-1; STATUS: fitted }}
PARAMETER E_i {{ VALUE: 0.9; UNIT: eV; STATUS: fitted }}
PARAMETER Qi_ref {{ VALUE: 2.5e10; UNIT: cm^-2; STATUS: fitted }}
PARAMETER E_q {{ VALUE: 0.4; UNIT: eV; STATUS: fitted }}
PARAMETER T_iref {{ VALUE: 1273.15; UNIT: K; STATUS: constant }}
PARAMETER p_ref {{ VALUE: 1.0; UNIT: atm; STATUS: constant }}
PARAMETER k_B {{ VALUE: 8.617333262e-5; UNIT: eV K^-1; STATUS: constant }}
# ---- where the exchange with oxygen stops as the wafer cools (hypothesis, added 10 November 2026) ----------------------
# The oxygen rate above was fitted with an activation energy at its lower bound (0.05 eV), so on its own it keeps moving
# charge at room temperature. Every history it was fitted and tested on ended its pull at 400 C, a cut-off that stood in for
# this. Reproducing Stanford 1982, Deal 1967 and Deal and Razouk 1980 with a wafer cooling to room temperature made the charge
# 3 to 5 times too high. The cut-off is now stated: the exchange is switched off over about 20 K around T_freeze. At 400 C it
# is 99% on, so every fitted and tested history is unchanged; how high the true freezing point is, is an open question
# (the Deal and Razouk alignment prefers pulls ending near 530 C).
PARAMETER T_freeze {{ VALUE: 623.15; UNIT: K; STATUS: hypothesis }}
PARAMETER w_freeze {{ VALUE: 10.0; UNIT: K; STATUS: hypothesis }}
QUANTITY rate {{ UNIT: s^-1; EQUATION: rate = k0 * exp(-E_a / (k_B * T)) / (1 + exp(-(T - T_freeze) / w_freeze)) }}
QUANTITY rate_inert {{ UNIT: s^-1; EQUATION: rate_inert = k_i0 * exp(-E_i / (k_B * T)) }}
QUANTITY Q_inert {{ UNIT: cm^-2; EQUATION: Q_inert = Qi_ref * exp((E_q / k_B) * (1 / T - 1 / T_iref)) }}
QUANTITY oxidizing {{ UNIT: 1; EQUATION: oxidizing = p_O2 / p_ref }}
QUANTITY Q_steady {{ UNIT: cm^-2; EQUATION: Q_steady = Q_hot + slope * (T_hot - T) }}
CONTROL_TRAJECTORY History_{tag} {{
{runs}
}}
# In oxygen the charge follows the temperature-dependent steady value.
OPERATOR F_OxidizingEquilibration : Relaxation {{
    EQUATION: d(Q_f)/dt = -rate * oxidizing * (Q_f - Q_steady)
}}
# Without oxygen it relaxes, at its own rate, toward an equilibrium of its own that falls as temperature rises.
# Akinwande, Ho and Plummer (1982) show the annealed charge cycling reversibly with temperature in argon.
OPERATOR F_InertRelaxation : Relaxation {{
    EQUATION: d(Q_f)/dt = -rate_inert * (1 - oxidizing) * (Q_f - Q_inert)
}}
OBSERVATION_MODEL Obs_Fixed_Charge {{ TARGET: Qss; UNIT: cm^-2; EQUATION: Qss = Q_f }}
EVALUATION_CONTRACT Contract_{tag} {{
    FROZEN: true
    DATASET: data/derived/deal_1967_qss.csv
    DATASET_DIGEST: sha256:{dataset_sha256}
    SPLIT: {split}
    TARGET: Qss = {target} +/- {tolerance} abs
}}

Our simulation against the paper

3 within, 1 near, 55 off of 59 numbers. Tolerance is stated per row; nothing was fitted for this page.

Aligning the simulation: what the unstated things would have to be

Every step whose timing or temperature the paper leaves open carries a range in the history above (VARY). scripts/align_study.py searched those ranges against the paper's numbers through the same predictor, first one unknown at a time, then all together. No parameter a program declares fitted was touched. The unknowns were chosen on D2_500C_10s, D2_500C_120s, D2_500C_20s, D2_500C_30s, D2_500C_60s, fig4_1000C_5p5nm, fig4_1050C_5p5nm, fig4_1100C_5p5nm, fig4_1200C_5p5nm, rto_1000C_10s, rto_1000C_28s, rto_1000C_50s, rto_1000C_90s, rto_1200C_10s, rto_1200C_25s, rto_1200C_5p4s, rto_1200C_6p4s, rto_1200C_8s, start_1100C_5p3nm only; every other number is a test they played no part in.

Together: HeatUp duration 30 s (was 10); Cool duration 30 s (was 30); PolyDeposition duration 5400 s (was 2400); GateDoping duration 1470 s (was 1800); Oxidation5p5nm1000 duration 28 s (was 28); Oxidation5p5nm1050 duration 45 s (was 20); Oxidation5p5nm1100 duration 24.38 s (was 15); Oxidation5p5nm1200 duration 6 s (was 6); Oxidation5p3nm duration 19.71 s (was 13); AnnealHeatUp duration 10 s (was 10); AnnealCool duration 30 s (was 30).

As reproduced: 3 of 59 within tolerance, median error 296.5%. Aligned: 6 of 59 within tolerance, median error 288.3%. On the held-out samples only: 2 of 26 within tolerance, median error 1043.8% as reproduced, 2 of 26 within tolerance, median error 1037.3% aligned.

Choices of program or material property, each scored on its own and on top of the aligned history:

Twelve unknowns were declared: the lamp heat-up (3 to 30 s) and the cooling (10 to 120 s) of every RTP step, the times of the polysilicon deposition (20 to 90 min) and the gate doping (10 to 60 min), the oxidation times the paper does not give (the four 5.5 nm oxides of Figure 4 and the 5.3 nm oxide under the anneals), the anneal heat-up and cooling, and the vacuum pump-down. They were chosen on the 1000 and 1200 °C oxides of Figure 3, Figure 4, the oxide before the anneals and the 500 °C deuterium series (33 numbers); the 1100 °C oxides of Figure 3 and the 900 °C deuterium, argon and vacuum series are the test (26 numbers). The pump-down is carried only by vacuum samples, all held out, so it was not searched. As reproduced: 3 of 59 within tolerance (median error 296%). Aligned: 6 of 59 (288%). On the held-out numbers: 2 of 26 before and after (median 1044% and 1037%; 1006% and 999% before the trap-density program took Brower's activation energy and release in commit 7f1ec87, the only change).

What the data pin down are the oxidation times the paper leaves out, through thickness only. The three added passes are thicknesses: 1050 °C needs 45 s (the top of its range) and 1100 °C 24 s to reach 5.5 nm, and the oxide under the anneals 20 s at 1100 °C to reach 5.0 nm against 5.3. Figures 2 and 3 together put 5.5 nm at about 15 to 20 s at 1100 °C, so the program needs more time than the paper's wafers had; that is the program growing too slowly (below), not a finding about the recipe. Trap density and fixed charge do not move with any of them.

Everything else is flat. The heat-up (in vacuum), the cooling, the deposition and the anneal ramps change no count. The combined search moved the heat-up to 30 s, the deposition to 90 min and the doping to 1470 s on differences of under 3 points of median error and no change in count; these are not findings. The doping time is the one with an effect: 600 s raises the median error to 198% and 3600 s lowers it to 149%, because a longer 900 °C step moves the trap density and the charge further toward the program's values for 900 °C; the count does not change.

Variants. Writing the heat-up in oxygen instead of vacuum adds 0.2 to 1.6 nm of oxide (1100 °C, 9 s: 4.11 against 4.55 nm, within tolerance; 1200 °C to 5.5 nm: 6.79, too thick) and makes the trap-density program refuse every history: it takes the oxidation temperature from the first oxygen step's start, 25 °C. The scored median then falls to 44% only because the refused rows leave the median. Removing the gate deposition and doping raises every fixed charge five-fold (to 1.8 to 2.4×10^11) and leaves the as-grown trap density within 5%, but it changes the anneals: the deuterium sites the program caps are no longer released by the 900 °C doping (below), so the 500 °C series falls to 2.0×10^10, 3.6×10^9, 6.7×10^8, 3.9×10^7 and 3.6×10^7 and the 900 °C series sits at 9.5×10^7 at every time (it recaps during the 30 s cool in deuterium). That puts deuterium at 500 °C, 20 s, within tolerance (3.6 against 4.1×10^9): 4 of 59 alone (median 171%), 7 of 59 with the aligned history (167%). Cooling in nitrogen instead of oxygen changes nothing by more than 5%, because the 900 °C doping comes after it.

The fixed-charge freeze-out, tested outside the page. With T_freeze patched in memory (the template is unchanged) and the gate steps left out, a 30 s settling cool in oxygen from 1200 °C leaves 2.84, 1.84, 1.17, 0.89 and 0.53×10^11 cm⁻² for T_freeze of 200, 350, 450, 530 and 700 °C; cooled in nitrogen it is 2.0×10^10 at every T_freeze. The shape of the cool matters as much: at T_freeze 350 °C the same wafer ends at 1.84 (settling, 30 s), 2.06 (linear, 30 s), 1.38 (exponential, TAU 10 s) and 0.82×10^11 (linear 10 s to room temperature), and 3.8×10^11 for a 120 s settling cool. So for a rapid thermal oxide cooled in oxygen the freeze-out and the cooling profile decide the charge over a factor of about 5. With the 900 °C gate doping in the history none of it matters: every combination gives 3.8 to 4.2×10^10 (numbers from a scratch script, freeze_fk.py, not stored in the repository).

With heating and cooling transitions (section above). No scenario moves any number by more than 2%: the RTP heat-up is already written, and whatever a slow cool in deuterium caps, the 900 °C gate doping that follows releases again. Before commit 7f1ec87 the slow-cooling scenarios moved the median from 296% to 86% by an artifact (a capping rate without temperature kept capping at 25 to 300 °C); with Brower's 1.66 eV capping at 300 °C is about 150 times slower than at 400 °C, and slower still below, and the release erases it anyway.

2 within, 1 near, 23 off of 26 numbers with the aligned settings (the samples used to choose the unknowns are left out).

What alignment cannot fix. Trap density during oxidation: the program gives 2.8 to 3.6×10^11 for every as-grown wafer and falls by under 5% over 90 s; Fukuda's falls 4 to 6 times in the same time at every temperature (1000 °C: 5.1 to 1.05×10^11). The program's relaxation time at 1000 °C is about 5500 s (fitted on Vitkavage's hour-long furnace oxides) against the paper's 17 s, and 380 s against 3 s at 1200 °C. Its floor (the relaxed population plus the second population at that oxidation temperature) is 1.4, 1.0 and 0.83×10^11 at 1000, 1100 and 1200 °C, against the paper's fitted floors of 0.90, 0.46 and 0.18×10^11: 1.6 to 4.6 times high and too flat in temperature. The one row within tolerance (1100 °C, 9 s) is where the paper's falling curve crosses the program's flat line. scripts/analyse_fukuda.py had already shown the clock is about 170 times too slow; this page shows the same through the predictor, with the history written out.

Anneals. Since commit 7f1ec87 the program caps with Brower's activation energy (40 times the 400 °C rate at 500 °C, 2×10^5 times at 900 °C) and releases capped sites at Brower's rate (2.5×10^-5 s⁻¹ at 500 °C, 12 s⁻¹ at 900 °C). As written, the 30 min gate doping at 900 °C then releases every site the deuterium capped, so deuterium at 500 and 900 °C again gives one number at every time, 2.55×10^11, now for a different reason: only the second population, which has no release, stays removed (3.17 to 2.55×10^11). The paper measured after the same doping and still sees the anneal (1.8×10^9 to 2.9×10^10), so its deuterium stayed, as SIMS shows; the program has no hydrogen inventory to recap from. At the end of the anneal itself (a scratch run with the anneal cooling and gate steps cut, fk2.py), the program gives 2.4×10^10, 4.3×10^9, 7.9×10^8, 4.2×10^7 and 3.8×10^7 at 500 °C for 10 to 120 s against the paper's 9.8, 4.1, 3.0, 1.8 and 4.3×10^9: the right size at 20 s, then 4 to 110 times too low, ending on the capping–release balance with no rise. At 900 °C it gives 3.8×10^9 at every time, 1.4% of the cappable sites open, against the paper's 1.9×10^9 at 10 s rising to 2.9×10^10 at 120 s: the level is inside the paper's range, but capping and release balance within a few milliseconds, so the program cannot make the slow rise. A rise over minutes needs something the program lacks: a hydrogen supply that runs out (atomic hydrogen from the gas, or the deuterium in the oxide), a spread of release barriers, or the isotope (deuterium is written as hydrogen). In argon and vacuum the program does nothing (3.16 to 3.17×10^11 throughout); the paper has a 10- to 20-fold fall in 10 s and a 2- to 3-fold rise by 120 s. No history unknown reaches any of these.

Fixed charge: after the 900 °C gate doping the program sits at its inert equilibrium for 900 °C, about 4×10^10, for every wafer; the paper's Nss falls 4.5 times from 1000 to 1200 °C oxidation and survives the same doping. Without the doping, and cooled in nitrogen, the program keeps the oxidation temperature (1.27 to 0.20×10^11, a ratio of 6.3 against the paper's 4.5) at four to six times the level; cooled in oxygen as written, 1.8 to 2.4×10^11, 9 to 38 times. It starts from Deal's thick-oxide steady value. After deuterium at 900 °C the paper's Nss dips to 0.13×10^10 at 10 s and recovers to 2.16×10^10 by 120 s, in step with its trap density; the program drops hydrogen steps from the fixed-charge history by design.

Thickness: the thin-oxide program is 44 to 46% low at 1000 °C at all four times (a constant ratio, so a rate about 1.8 times too slow, not an offset), 23% low at 1100 °C after 9 s and 8% low after 70 s. These rapid thermal oxides grow faster than Massoud's furnace oxides extrapolated to these times, most at 1000 °C, the top of the program's fitted range. The pairing of Figure 2's thicknesses with Figure 3's times is ours.

What our language and ontology cannot yet say

• Which step is the oxidation. A lamp heat-up written in oxygen, as an RTP usually runs, makes the trap-density program read the oxidation temperature as 25 °C and refuse every history here; the heat-up had to be written in vacuum, which removes 0.2 to 1.6 nm of oxide the programs would otherwise grow. A ROLE oxidation|ramp|anneal|pull on each RUN would let programs find the step by what it is.
• Isotopes and process gases. Deuterium had to be written as hydrogen (pure_H2), silane as nitrogen, and the phosphorus source not at all: the language's gases are Ar, H2, H2O, N2 and O2. mix:D2=1 and mix:SiH4=…, POCl3 would record what was done; a program could then ignore them, or carry an isotope effect (the paper's SIMS counts deuterium).
• A deposition and a doping as steps. The 350 nm polysilicon at 620 °C and its 900 °C doping are written as nitrogen holds. A DEPOSIT polysilicon 350 nm statement that caps the oxide (no gas reaches it afterwards) would say why the gas does not matter and let a program ask whether hydrogen can leave through the cap, which is what the computed bound below depends on.
• An observation's timing. The trap density and charge were measured after the gate steps, not after the anneal the figure is about. The language ends the history at the measurement implicitly. An explicit OBSERVE Dit, Nf AFTER <step> would make the gap between the anneal and the measurement visible on the page and let a program answer at the anneal as well.
• Thickness and time on separate figures. Figures 2 and 3 are the same wafers against thickness and against time, never paired. A sample field OXIDE_NM read as a measured property beside a stated time would let each wafer carry both, and let a growth program be scored on it without a pairing of ours.
• Where the hydrogen goes. Not a language gap but a program one the language exposes. Since commit 7f1ec87 the trap-density program's capping has Brower's activation energy and capped sites release hydrogen at 900 °C, but released hydrogen leaves the model: nothing holds the deuterium SIMS finds in the oxide (1.7×10^12 to 2.8×10^13 cm⁻²), so nothing can recap on cooling under the polysilicon, and the 900 °C gate doping erases every anneal. A hydrogen inventory per layer, and a DEPOSIT that caps it, would let a program ask what the paper's wafers kept.

With Quantum ESPRESSO switched on

This page was simulated with parameters from atomic calculations switched on (ISL_USE_COMPUTED=1): the energy of Si• + ½H₂ → Si–H for a silicon dangling bond, computed with Quantum ESPRESSO on a 14-atom cluster, with the zero-point correction from its computed vibrations. With the free energy of hydrogen gas it bounds the share of dangling bonds a hydrogen step could leave uncapped at equilibrium. Deuterium is written as hydrogen; the bound has no isotope effect.

Read the table below with care. The bound is evaluated over the whole history, and here the deuterium anneal is followed by 40 min at 620 °C and 30 min at 900 °C without hydrogen (the gate deposition and doping). At equilibrium those steps release every capped bond, so the bound for every deuterium sample is the program's density without hydrogen, 3.17×10^11. The measured densities (1.8×10^9 to 2.9×10^10) are 10 to 170 times below it: the deuterium did not leave during the gate steps as equilibrium would require (the polysilicon cap, or a release much slower than the template's assumed 1 s⁻¹). SIMS finds 1.7×10^12 to 2.8×10^13 cm⁻² of deuterium in the oxide (PDF p. 4).

At the end of the anneal itself (a scratch run of the same histories cut after the anneal, bound_fk.py): at 500 °C the uncapped share is 3.4×10^-5, a bound of 1.1×10^7 cm⁻² eV⁻¹; the measured 1.8×10^9 to 9.8×10^9 are 160 to 900 times above it, so the 500 °C anneal is far from equilibrium. At 900 °C the share is 3.2% and the bound 1.06×10^10 (4.8×10^9 if it is scaled from the paper's own 1.5×10^11 before the anneal instead of the program's 3.3×10^11). The paper's 900 °C density starts below it (1.9×10^9 at 10 s) and rises through it (1.4×10^10 at 60 s, 2.9×10^10 at 120 s). That rise is the direction equilibrium at 900 °C requires: hydrogen leaving the dangling bonds. It is the release the authors call thermal emission of SiH and SiD (Eq. 6). Since commit 7f1ec87 the trap-density program has that release (Brower's rate, 12 s⁻¹ at 900 °C); its own capping–release balance at the end of a 900 °C hold leaves 1.4% of the cappable sites open, 3.8×10^9, inside the paper's range but reached in milliseconds, so it does not rise with time.

With heating and cooling transitions

No paper we hold states how its wafers heated up or cooled down. The project owner specified scenarios for one Vitkavage wafer (isl_harness/vitkavage_transitions.py); isl_harness/thermal_transitions.py applies the same numbers to every sample here: a heat-up in nitrogen before the first furnace step (a hot push of 1 to 5 min, or a cold-furnace ramp of 60 to 120 min), the owner's radiative cooling knots after the last furnace step or after the paper's own pull (fast, or every time multiplied by 5), and ramps around an anneal at 300 to 500 °C. The paper's own steps are kept as written. All transitions are assumptions, written in the history with TIMING assumed.

The paper's own conclusions

What we would like Emily to check

1. In a lamp RTP of 1992, does the quoted oxidation time usually start when the wafer reaches temperature or when the lamps switch on? At 1200 °C for 5 s it decides whether there is any oxidation at all at the stated temperature.
2. Would the 900 °C phosphorus doping of the polysilicon gate (after every anneal) be expected to reset the fixed charge and trap density the anneals set? The paper's Nss still depends on the oxidation temperature after it.
3. Figure 6's trap densities for the 900 °C deuterium anneal are ten to thirty times Figure 5's for the same anneal. Which is right, or are they different wafers?
4. Is a 12-fold fall in midgap density in 10 s of argon at 500 °C plausible without hydrogen? Could hydrogen from the chamber or the wafer be doing it?